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N04L63W1A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

Description

1 A B C D E F G H LB I/O8 I/O9 VSS VCC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE I/O1 I/O3 I/O4 I/O5 WE A11 6 NC I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A17 WE CE OE LB UB I/O0-I/O15 NC VCC VSS Pin Function Address Inputs Write Enable Inp

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 4.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power.

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Datasheet Details

Part number N04L63W1A
Manufacturer ON Semiconductor
File Size 219.25 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N04L63W1A Datasheet
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Full PDF Text Transcription

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N04L63W1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W1A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N04L63W1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
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