Part NCD57091C
Description IGBT/MOSFET Gate Driver
Category MOSFET
Manufacturer onsemi
Size 1.91 MB
onsemi
NCD57091C

Overview

  • High Peak Output Current (+6.5 A/-6.5 A)
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn-on (Version A/D/F)
  • Short Propagation Delays with Accurate Matching
  • IGBT/MOSFET Gate Clamping during Short Circuit
  • IGBT/MOSFET Gate Active Pull Down
  • Tight UVLO Thresholds for Bias Flexibility
  • Wide Bias Voltage Range including Negative VEE2 (Version B)
  • 3.3 V, 5 V, and 15 V Logic Input
  • 5 kVrms Galvanic Isolation
  • High Transient Immunity