NDD04N50Z Datasheet | onsemi

Features - Low ON Resistance - Low Gate Charge - ESD Diode- Protected Gate - 100% Avalanche Tested - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain- to- Source Voltage Continuous Drain Current Rq JC Continuous Drain Current Rq JC, TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation Rq JC Gate- to- Source Voltage Single Pulse Avalanche Energy, ID = 3.4 A ESD (HBM) (JESD22- A114) Peak Diode Recovery VDSS ID ID IDM PD VGS EAS Vesd dv/dt 500 3.0 1.9 12 61 ±30 120 2800 4.5 (Note 1) A W V m J V V/ns Continuous Source Current (Body Diode) IS 3.4 A Maximum Temperature for Soldering Leads 260 °C Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C. http://onsemi. VDSS 500 V RDS(on) (MAX) @ 1.5 A 2.7 W N- Channel D (2) G (1) S (3) 4 4 1 23 IPAK CASE 369D STYLE...