NDD01N60-1G Overview
NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) V(BR)DSS 600 V RDS(ON) MAX 8.5 W @ 10 V N−Channel MOSFET D (2) G (1) S (3) MARKING DIAGRAMS See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Drain−to−Source Leakage Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Negative Threshold Temperature Coefficient Static Drain-to-Source On Resistance Forward Transconductance Input Capacitance (Note 7) Output Capacitance (Note 7) Reverse Transfer...
NDD01N60-1G Key Features
- 100% Avalanche Tested
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS