Click to expand full text
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF
NDD Unit
Drain−to−Source Voltage
Continuous (Note 1)
Drain
Current
RqJC
VDSS ID
600 2.4 2.2
V A
Continuous TA = 100°C
Drain Current (Note 1)
RqJC
Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage
Single Pulse Avalanche Energy, ID = 2.4 A
ESD (HBM) (JESD 22−A114)
ID
IDM PD VGS EAS
Vesd
1.6 1.4 A
10 24
±30 120
9 57
A W V mJ
2500
V
RMS Isolation Voltage (t = 0.3 sec., R.H.
NDD02N60Z Datasheet
