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NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W
Features
• 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Pulsed Drain Current, tp = 10 ms Power Dissipation – RqJC Steady State, TC = 25°C Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) Peak Diode Recovery (Note 2) Source Current (Body Diode) Lead Temperature for Soldering Leads Operating Junction and Storage Temperature Symbol VDSS ID ID IDM PD VGS EAS dv/dt IS TL TJ, TSTG 1.5 260 −55 to +150 1.5 1.0 6.0 46 ±30 13 4.5 0.4 NDD 600 0.
NDD01N60T4G Datasheet
