Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- N-Channel, Field Effect Transistor, Enhancement Mode
NDP6060 / NDB6060
VDSS 60 V
RDS(ON) MAX 0.025 mW @ 10 V
ID MAX 48 A
General Description These N- Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on- state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where...