NGD8209N Description
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
NGD8209N is Ignition IGBT manufactured by onsemi.
| Part Number | Description |
|---|---|
| NGD8209NT4G | Ignition IGBT |
| NGD8201AN | Ignition IGBT |
| NGD8201ANT4G | Ignition IGBT |
| NGD8201B | Ignition IGBT |
| NGD8201NT4G | Ignition IGBT |
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).