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NGTB10N60R2DT4G Datasheet IGBT

Manufacturer: onsemi

Overview

NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com.

Key Features

  • Reverse Conducting II IGBT.
  • IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V].
  • IGBT tf=65ns (typ).
  • Diode VF=1.5V (typ) [IF=10A].
  • Diode trr=90ns (typ).
  • 5s Short Circuit Capability.