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NGTB10N60FG - N-Channel IGBT

Key Features

  • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V).
  • IGBT IC=20A (Tc=25°C).
  • Adaption of full isolation type package.
  • 5μs short circuit capability.
  • Diode VF=1.3V typ. (IF=10A).
  • Diode trr=70ns typ.
  • Enhansment type.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • IGBT IC=20A (Tc=25°C) • Adaption of full isolation type package • 5μs short circuit capability • Diode VF=1.3V typ.(IF=10A) • Diode trr=70ns typ.