NGTB10N60FG
NGTB10N60FG is N-Channel IGBT manufactured by onsemi.
Features
- IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V)
- IGBT IC=20A (Tc=25°C)
- Adaption of full isolation type package
- 5μs short circuit capability
- Diode VF=1.3V typ.(IF=10A)
- Diode trr=70ns typ.
- Enhansment type
Applications
- Power factor correction of white goods appliance
- General purpose inverter
Specifications
TO-220F-3FS
Absolute Maximum Ratings at Ta = 25°C, Unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Collector to Emitter Voltage Gate to Emitter Voltage
Collector Current (DC)
VCES VGES
IC- 1
Limited by Tjmax
@ Tc=25°C
- 2 @ Tc=100°C
- 2
600 V ±20 V
20 A 10 A
Collector Current (Pulse) Diode Average Output Current Allowable Power Dissipation Junction Temperature
ICP Pulse width Limited by Tjmax IO PD Tc=25°C (Our ideal heat dissipation condition)
- 2 Tj
72 A 10 A 40 W 150 °C
Storage Temperature
Tstg
- 55 to +150
°C
Note :
- 1 Collector Current is calculated from the following...
