NGTB10N60R2DT4G - IGBT

Datasheet Summary

Features

Reverse Conducting II IGBT.
IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V].
IGBT tf=65ns (typ).
Diode VF=1.5V (typ) [IF=10A].
Diode trr=90ns (typ).
5s Short Circuit Capability.

ON Semiconductor

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Datasheet Details

Part number	NGTB10N60R2DT4G
Manufacturer	ON Semiconductor
File Size	580.80 KB
Description	IGBT
Datasheet	NGTB10N60R2DT4G Datasheet
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NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel www.onsemi.com Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]  IGBT tf=65ns (typ) Diode VF=1.

Published: Apr 29, 2017 |