NGTB10N60R2DT4G Datasheet | onsemi

Features - Reverse Conducting II IGBT - IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V] - IGBT tf=65ns (typ) - Diode VF=1.5V (typ) [IF=10A] - Diode trr=90ns (typ) - 5s Short Circuit Capability Applications - General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax @Tc=25C - 2 @Tc=100C - 2 Collector Current (Peak) Pulse width Llimited by Tjmax Diode Average Output Current Power Dissipation Tc=25C (Our ideal heat dissipation condition) - 2 Junction Temperature Storage Temperature Symbol VCES VGES IC - 1 ICP IO PD Tj Tstg Value 600 20 20 10 - 55 to +175 Unit V V A...