NGTB10N60R2DT4G Overview
NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel .onsemi.
NGTB10N60R2DT4G Key Features
- Reverse Conducting II IGBT
- IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]
- IGBT tf=65ns (typ) -Diode VF=1.5V (typ) [IF=10A] -Diode trr=90ns (typ) -5s Short Circuit Capability