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  ON Semiconductor Electronic Components Datasheet  

NJD1718 Datasheet

Power Transistors

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NJD1718, NJVNJD1718
Power Transistors
PNP Silicon DPAK For Surface Mount
Applications
Designed for highgain audio amplifier and power switching
applications.
Features
Low CollectorEmitter Saturation Voltage
High Switching Speed
Epoxy Meets UL 94 V0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current Continuous
Collector Current Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VCB
VCEO
VEB
IC
ICM
IB
PD
50 Vdc
50 Vdc
5 Vdc
2 Adc
3 Adc
0.4 Adc
15 W
0.1 W/°C
Total Device Dissipation
@ TA = 25°C (Note 1)
Derate above 25°C
PD
1.68 W
0.011
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to +150 °C
ESD Human Body Model
HBM
3B
V
ESD Machine Model
MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 2)
RRqqJJCA
°C/W
10
89.3
2. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2013
October, 2013 Rev. 4
1
http://onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
1718G
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Device
ORDERING INFORMATION
Device
Package
Shipping
NJD1718T4G
DPAK 2500 / Tape & Reel
(PbFree)
NJVNJD1718T4G DPAK 2500 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NJD1718/D


  ON Semiconductor Electronic Components Datasheet  

NJD1718 Datasheet

Power Transistors

No Preview Available !

NJD1718, NJVNJD1718
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 50 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.5 A, VCE = 2 V)
(IC = 1.5 Adc, VCE = 2 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollectorEmitter Saturation Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1 A, IB = 0.05 A)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter Saturation Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1 A, IB = 0.05 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBaseEmitter On Voltage (Note 3)
(IC = 1 Adc, VCE = 2 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrentGain Bandwidth Product (Note 4)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 500 mAdc, VCE = 2 Vdc, ftest = 10 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSwitching Timers
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC = 30 V, IC = 1 A
Symbol
Min Typ Max Unit
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
tON
tSTG
tf
Vdc
50
nAdc
− −100
− −100 nAdc
70 240
40
Vdc
− −0.2 0.5
Vdc
− − −1.2
Vdc
− − −1.2
MHz
80
pF
33
55 ns
320
40
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
4. fT = hfe⎪• ftest.
http://onsemi.com
2


Part Number NJD1718
Description Power Transistors
Maker ON Semiconductor
Total Page 5 Pages
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