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  ON Semiconductor Electronic Components Datasheet  

NSR1020MW2 Datasheet

Schottky Barrier Diode

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NSR1020MW2
Schottky Barrier Diodes
This Schottky Barrier Diode in the SOD−323 package offers
extremely low Vf performance. The low forward voltage makes them
capable of handling high current in a very small package. The
resulting device is ideally suited for application as a blocking diode in
charging applications or as part of discrete buck converter or discrete
boost converter. As part of a buck conversion circuit, a boost
conversion circuit or a charging circuit the low Vf drop of the Schottky
improves the efficiency of the overall device by consuming less power
in the forward mode.
Features
Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc
High Current Capability
ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
NSVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Revese Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
VRM
PF
20 Vdc
30 V
200 mW
2.0 mW/°C
Forward Current (DC)
Continuous
IF A
1
Forward Current
t = 8.3 ms Half Sinewave
IF A
5
Repetitive Forward Current
IFRM
period = 1.5 s, Duty Cycle = 66.7%
2
A
Junction Temperature
TJ 125 Max °C
Storage Temperature Range
Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING
DIAGRAM
RE MG
G
RE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR1020MW2T1G SOD−323 3000 / Tape &
(Pb−Free)
Reel
NSR1020MW2T3G SOD−323
(Pb−Free)
NSVR1020MW2T1G SOD−323
(Pb−Free)
10,000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 3
Publication Order Number:
NSR1020MW2/D


  ON Semiconductor Electronic Components Datasheet  

NSR1020MW2 Datasheet

Schottky Barrier Diode

No Preview Available !

NSR1020MW2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Total Capacitance (VR = 5.0 V, f = 1.0 MHz)
CT − 25 29 pF
Reverse Leakage (VR = 15 V)
IR − − 40 mAdc
Forward Voltage (IF = 1 mAdc)
VF − − 0.20 Vdc
Forward Voltage (IF = 10 mAdc)
VF − − 0.26 Vdc
Forward Voltage (IF = 100 mAdc)
VF − − 0.33 Vdc
Forward Voltage (IF = 500 mAdc)
VF − − 0.44 Vdc
Forward Voltage (IF = 1000 mAdc)
VF − − 0.54 Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1000
100
10
1
0.0
150°C
85°C
−55°C
25°C −45°C
0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Voltage
10000
1000
100
150°C
125°C
85°C
10
1
0.6 0
25°C
5 10 15 20
VR, REVERSE VOLTAGE (V)
Figure 2. Leakage Current
25
140
120
100
80
60
40
20
0
0
5 10 15
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
20
www.onsemi.com
2


Part Number NSR1020MW2
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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