NTCR040N120M3S Datasheet, ON Semiconductor

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NTCR040N120M3S Features and benefits

* Typ. RDS(on) = 40 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 75 nC)
* High Speed Switching with Low Capacitance (Coss = 80 pF) Applications
* S.

NTCR040N120M3S Application

* Solar Inverters
* Electric Vehicle Charging Stations
* Uninterruptible Power Supplies (UPS)
* Energy S.

NTCR040N120M3S Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Co.

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