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NTD4855N - Power MOSFET

Features

  • Trench Technology.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Optimized Gate Charge to Minimize Switching Losses.
  • These are Pb--Free Devices.

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Full PDF Text Transcription

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NTD4855N Power MOSFET 25 V, 98 A, Single N--Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • VCORE Applications • DC--DC Converters • Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain--to--Source Voltage Gate--to--Source Voltage Continuous Drain Current RθJA (Note 1) VDSS 25 V VGS ±20 V TA = 25°C ID 18 A TA = 85°C 14 Power Dissipation RθJA (Note 1) Continuous Drain Current RθJA (Note 2) Power Dissipation RθJA (Note 2) Continuous Drain Current RθJC (Note 1) TA = 25°C Steady State TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C PD ID PD
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