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NTD50N03R - Power MOSFET

Features

  • Planar Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb.
  • Free Packages are Available http://onsemi. com V(BR)DSS 25 V RDS(on) TYP 12.5 mW @ 10 V 19 mW @ 4.5 V N.
  • Channel D ID MAX 45 A.

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Full PDF Text Transcription

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NTD50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available http://onsemi.com V(BR)DSS 25 V RDS(on) TYP 12.5 mW @ 10 V 19 mW @ 4.
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