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NTD5802N - Power MOSFET

Key Features

  • 40 V, Single N.
  • Channel, 101 A DPAK.
  • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested These are Pb.
  • Free Devices www. DataSheet4U. com http://onsemi. com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.0 V D ID 101 A 50 A.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NTD5802N Power MOSFET Features 40 V, Single N−Channel, 101 A DPAK • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses MSL 1/260°C AEC Q101 Qualified 100% Avalanche Tested These are Pb−Free Devices www.DataSheet4U.com http://onsemi.com V(BR)DSS 40 V RDS(on) 4.4 mW @ 10 V 7.8 mW @ 5.