The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NTD5807N, NVD5807N
Power MOSFET
40 V, 23 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • AEC−Q101 Qualified and PPAP Capable − NVD5807N • These Devices are Pb−Free and are RoHS Compliant
Applications
• CCFL Backlight • DC Motor Control • Class D Amplifier • Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS)
VGS
"30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC) (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
23
A
16
33
W
Pulsed Drain Current
tp = 10 ms
ID
NTD5807N Datasheet
