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NTD5803N
Power MOSFET
40 V, 76 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) • High Current Capability • Avalanche Energy Specified • These are Pb−Free Devices
Applications
• CCFL Backlight • DC Motor Control • Class D Amplifier • Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS)
VGS
±30
V
Continuous Drain Current (RqJC) (Note 1)
Power Dissipation (RqJC) (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State
TC = 25°C
PD
76
A
54
83
W
Pulsed Drain Current
tp = 10 ms
IDM
228
A
Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175
Sour
NTD5803N Datasheet
