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MOSFET – Power, N-Channel
100 V, 17 A, 81 mW
NTD6416AN, NVD6416AN
Features
• Low RDS(on) • High Current Capability • 100% Avalanche Tested • HBM ESD Level Class 1B, MM ESD Level Class M2 • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Continuous Drain
Steady TC = 25°C
ID
Current
State
TC = 100°C
17
A
11
Power Dissipation
Steady TC = 25°C
PD
State
71
W
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
62
A
TJ, Tstg −55 to °C +175
So
NTD6416AN Datasheet
