NTH4LN040N65S3H Datasheet | onsemi

Description SUPERFET III MOSFET is onsemi’s brand- new high voltage super- junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET FAST series is very suitable for the various power systems for miniaturization and higher efficiency. Features - 700 V @ TJ = 150°C - Typ. RDS(on) = 32 m W - Ultra Low Gate Charge (Typ. Qg = 132 n C) - Low Effective Output Capacitance (Typ. Coss(eff.) = 1267 p F) - 100% Avalanche Tested - These Devices are Pb- Free and are Ro HS pliant Applications - Tele / Server Power Supplies - Industrial Power Supplies - UPS / Solar DATA SHEET .onsemi. VDSS 650 V RDS(ON) MAX 40 m W @ 10 V ID MAX 62 A S1: Driver Source S1 S2 S2: Power Source POWER MOSFET D S2 S1 G TO- 247- 4LD CASE 340CW MARKING DIAGRAM AYWWZZ T040N 65S3H A YWW ZZ T040N65S3H = Assembly Site Code = Data Code (Year & Week) = Assembly Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor ponents Industries, LLC, 2020 August, 2021 - Rev. 2 Publication Order Number: NTH4LN040N65S3H/D ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value...