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  ON Semiconductor Electronic Components Datasheet  

NTHS4166N Datasheet

N-Channel MOSFET

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NTHS4166N
MOSFET – Power, Single,
N-Channel, ChipFET
Package
30 V, 8.2 A
Features
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Leadless ChipFET Package has 40% Smaller Footprint than TSOP6
Excellent Thermal Capabilities
This is a PbFree Device
Applications
Load Switching
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJA, t v 5 s
Power Dissipation
RqJA (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) RqJF
Single Pulse DraintoSource Avalanche
Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 20 Apk, L = 0.1 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
TJ,
TSTG
IS
EAS
TL
30
±20
6.6
4.8
1.5
4.9
3.6
0.8
8.2
5.9
2.2
32
55 to
150
2.6
20
260
V
V
A
W
A
W
A
W
A
°C
A
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2007
May, 2019 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Max
22 mW @ 10 V
27 mW @ 4.5 V
D
ID Max
8.2 A
G
S
NChannel MOSFET
MARKING DIAGRAM
AND PIN ASSIGNMENT
8 DDDS
1
ChipFET
CASE 1206A
STYLE 1
466 M
G
1 D DDG
466 = Specific Device Code
M = Month Code
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NTHS4166NT1G ChipFET 3000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTHS4166N/D


  ON Semiconductor Electronic Components Datasheet  

NTHS4166N Datasheet

N-Channel MOSFET

No Preview Available !

NTHS4166N
1. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – t 5 s (Note 3)
RqJA
JunctiontoAmbient – t 5 s (Note 4)
RqJA
JunctiontoFoot (Drain) Steady State (Note 3)
RqJF
3. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
Max
86
57
155
20
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V, VDS = 30 V TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold
Temperature Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
DraintoSource OnResistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 4.9 A
VGS = 4.5 V, ID = 3.7 A
VDS = 5 V, ID = 4.9 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V, ID = 4.9 A
VGS = 10 V, VDS = 15 V, ID = 4.9 A
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 4.9 A, RG = 3.0 W
Fall Time
tf
TurnOn Delay Time
td(on)
Rise Time
TurnOff Delay Time
tr
td(off)
VGS = 10 V, VDS = 15 V,
ID = 4.9 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
1.1
Unit
°C/W
Typ Max Units
V
18.3 mV/°C
1.0
10
±100
mA
nA
2.3 V
5.5 mV/°C
18 22 mW
23 27
9.0 S
900 pF
210
140
9.2 nC
0.85
2.86
3.84
18 nC
1.6
12 ns
13
16
5.0
8.0 ns
11
20
4.0
http://onsemi.com
2


Part Number NTHS4166N
Description N-Channel MOSFET
Maker ON Semiconductor
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