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NTHS5404 Power MOSFET
20 V, 7.2 A, N−Channel ChipFETE
Features
• • • •
Low RDS(on) for Higher Efficiency Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board Space Pb−Free Package is Available
http://onsemi.com
V(BR)DSS 20 V
RDS(on) TYP 25 mW @ 4.5 V
ID MAX 7.2 A
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Drain−Source Voltage Gate−Source Voltage Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C Pulsed Drain Current Continuous Source Current (Diode Conduction) (Note 1) Maximum Power Dissipation (Note 1) TA = 25°C TA = 85°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID 7.2 5.
NTHS5404 Datasheet
