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NTHS5404T1
MOSFET – Power, N-Channel, ChipFET
20 V, 7.2 A
Features
• Low RDS(on) for Higher Efficiency • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Saves Board Space • Pb−Free Package is Available
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
http://onsemi.com
V(BR)DSS 20 V
RDS(on) TYP 25 mW @ 4.5 V
ID MAX 7.2 A
D
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Steady Symbol 5 Secs State
Unit
Drain−Source Voltage
Gate−Source Voltage
Continuous Drain Current (TJ = 150°C) (Note 1) TA = 25°C TA = 85°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction) (Note 1)
VDS 20 V VGS "12 V ID A
7.2 5.2 5.2 3.8
IDM "20 A IS 7.2 5.
NTHS5404T1 Datasheet
