* Leading Trench Technology for Low RDS(ON) Extending Battery Life
* SC
* 88 Small Outline (2x2 mm) for Maximum Circuit Board Utilization, Same as SC
* 70
* 6
* Gate Diodes for ESD Protection
* Pb
* Free Package is Available Applications
NTJS4151P Datasheet (231.40 KB)
NTJS4151P
231.40 KB
P-channel power mosfet.
DATA SHEET www.onsemi.com MOSFET Power, Single, P-Channel, Trench, SC-88 -20 V, -4.2 A NTJS4151P V(BR)DSS 20 V RDS(on) Typ 47 mW.
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