Datasheet Summary
MOSFET
- Power, Dual, N-Channel, Logic Level, Dual SO8FL
60 V, 39 mW, 17 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (5x6 mm) for pact Design
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID rent RYJ- mb (Notes 1, 2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
RYJ- mb (Notes 1, 2, 3)
Tmb = 100°C
Continuous Drain Cur-
TA = 25°C
ID rent...