NTMFS10N7D2C Datasheet, ON Semiconductor

* Shielded Gate MOSFET Technology
* Max rDS(on) = 7.2 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 23.4 mW at VGS = 6 V, ID = 14 A
* 50% Lower Qrr than Oth.

* Primary DC−DC MOSFET
* Synchronous Rectifier in DC−DC and AC−DC
* Motor Drive
* Solar MAXIMUM RATINGS.

This N−Channel MV MOSFET is produced using onsemi’s advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized to minimize on−state resistance and yet maintain superior switching performance with best in.