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  ON Semiconductor Electronic Components Datasheet  

NTMFS5C646NL Datasheet

Power MOSFET

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NTMFS5C646NL
Power MOSFET
60 V, 4.7 mW, 93 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
93
65
79
40
20
14
3.7
1.8
750
−55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 5 A)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 100 A
EAS 185 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
1.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
4.7 mW @ 10 V
6.3 mW @ 4.5 V
ID MAX
93 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 5C646L
S AYWZZ
G
D
D
D
5C646L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
May, 2018 − Rev. 5
1
Publication Order Number:
NTMFS5C646NL/D


  ON Semiconductor Electronic Components Datasheet  

NTMFS5C646NL Datasheet

Power MOSFET

No Preview Available !

NTMFS5C646NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
60
VGS = 0 V,
VDS = 60 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
15.5 mV/°C
10
mA
250
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 80 mA
VGS = 10 V
ID = 50 A
VGS = 4.5 V
ID = 50 A
VDS = 15 V, ID = 50 A
1.2 2.0 V
−4.9 mV/°C
3.8 4.7
mW
5.0 6.3
105 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 30 V; ID = 25 A
VGS = 10 V, VDS = 30 V; ID = 25 A
VGS = 4.5 V, VDS = 30 V; ID = 25 A
2164
900
17
15.7
33.7
1.5
5.6
5.1
2.8
pF
nC
V
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 30 V,
ID = 25 A, RG = 2.5 W
10.4
14.9
ns
23.6
5.1
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 50 A
Reverse Recovery Charge
QRR
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
0.88 1.2
0.78
40.9
20.8
20.1
32
V
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number NTMFS5C646NL
Description Power MOSFET
Maker ON Semiconductor
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