* Q1: N
* Channel
* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N
* Channel
* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A
* Low Inductance Packaging
NTTFD021N08C Datasheet (410.86 KB)
NTTFD021N08C
410.86 KB
N-channel mosfet.
DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 80 V, 21 mW, 24 A NTTFD021N08C V(BR)DSS 80 V RDS(ON) MAX 21 mW @ 10 V 55 mW @ 6 V ID MAX 24 A.
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