NTTFD021N08C Datasheet | onsemi

Description This device includes two specialized N- Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Features Q1: N- Channel - Max r DS(on) = 21 m W at VGS = 10 V, ID = 7.8 A - Max r DS(on) = 55 m W at VGS = 6 V, ID = 3.9 A Q2: N- Channel - Max r DS(on) = 21 m W at VGS = 10 V, ID = 7.8 A - Max r DS(on) = 55 m W at VGS = 6 V, ID = 3.9 A - Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses - Ro HS pliant Applications - puting - munications - General Purpose Point of Load PIN DESCRIPTION Pin Name 1, 11, 12 GND (LSS) 3, 4, 5, 6 V + (HSD) 8, 9, 10 Description Low Side Source Low Side Gate High Side Drain High Side Gate Switching Node, Low Side Drain GND LSG V+ V+ ELECTRICAL CONNECTION GND V+ SW GND SW LSG SW V+ HSG V+ SW SW SW HSG Dual N-Channel MOSFET PIN1 PIN1 Top Bottom...