NTTFD9D0N06HL - N-Channel Power MOSFET

Product Overview

ON Semiconductor

Part number	NTTFD9D0N06HL
Manufacturer	ON Semiconductor
File Size	436.70 KB
Description	N-Channel Power MOSFET
Datasheet	NTTFD9D0N06HL Datasheet
Additional preview pages of the NTTFD9D0N06HL datasheet.

This device includes two specialized N

a dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Q1: N.
Channel.
Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A Q2: N.
Channel.
Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
RoHS Compliant Typical.

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Published: Aug 21, 2024 |