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NTTFD9D0N06HL - N-Channel Power MOSFET

General Description

This device includes two specialized N

a dual package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Key Features

  • Q1: N.
  • Channel.
  • Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A Q2: N.
  • Channel.
  • Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A.
  • Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A.
  • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
  • RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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MOSFET - Power, Single N-Channel 60 V, 9 mW, 38 A NTTFD9D0N06HL General Description This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Features Q1: N−Channel • Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A • Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A Q2: N−Channel • Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A • Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.