NVB5860NL Datasheet | onsemi

Features - Low RDS(on) - High Current Capability - 100% Avalanche Tested - These Devices are Pb- Free, Halogen Free and are Ro HS pliant - NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Drain- to- Source Voltage Gate- to- Source Voltage - Continuous Continuous Drain Current, Rq JC Steady State TA = 25°C TA = 100°C Power Dissipation, Rq JC Steady State TA = 25°C Pulsed Drain Current tp = 10 ms Current Limited by Package Operating and Storage Temperature Range VDSS VGS ID IDM IDMmax TJ, Tstg 60 $20 220 156 283 660 130 - 55 to +175 Source Current (Body Diode) Single Pulse Drain- to- Source Avalanche Energy (L = 0.3 m H) IS 130 EAS 735 Lead Temperature for Soldering Purposes (1/8″ from Case for 10 Seconds) TL 260 Unit V V A A A °C A m J °C THERMAL RESISTANCE RATINGS Parameter Symbol Max...