Datasheet4U Logo Datasheet4U.com

NVCR4LS3D6N08M7A - N-Channel MOSFET

Key Features

  • Typical RDS(on) = 2.8 mW at VGS = 10 V.
  • Typical Qg(tot) = 68 nC at VGS = 10 V.
  • AEC.
  • Q101 Qualified.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NVC1001 4-Channel Color Video Display ASIC NextChip
NVCLL024Z LED bulb color NICHIA
NVCLL024Z-M2 LED NICHIA
NVCLL024Z-M3 LED NICHIA
NVCLL024Z-M7 LED NICHIA

Other Datasheets by onsemi

Part Number Description
NVCR4LS004N10MCA N-Channel Power MOSFET
NVCR4LS1D3N08M7A N-Channel Power MOSFET
NVCR4LS1D7N08M7A N-Channel MOSFET
NVCR4LS2D8N08M7A N-Channel MOSFET
NVCR8LS025N65S3A N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.onsemi.com MOSFET – Power, N-Channel 80 V, 3.6 mW NVCR4LS3D6N08M7A Features • Typical RDS(on) = 2.8 mW at VGS = 10 V • Typical Qg(tot) = 68 nC at VGS = 10 V • AEC−Q101 Qualified • RoHS Compliant DIMENSION (mm) Die Size Die Size (Sawn) Source Attach Area Gate Attach Area Die Thickness Gate and Source: AlSiCu Drain: Ti−NiV−Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2768 3810 × 2463.8 3790 ±15 × 2443.8 ±15 3606.3 × 2236.4 359.9 × 517.5 101.6 ±19.1 ORDERING INFORMATION Device NVCR4LS3D6N08M7A Package Wafer Sawn on Foil RECOMMENDED STORAGE CONDITIONS Temperature RH 22 to 28°C 40 to 66% The Chip is 100% Probed to Meet the Conditions and Limits Specified at TJ = 25°C.