Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, N-Channel
80 V, 3.6 mW
Features
- Typical RDS(on) = 2.8 mW at VGS = 10 V
- Typical Qg(tot) = 68 nC at VGS = 10 V
- AEC- Q101 Qualified
- RoHS pliant
DIMENSION (mm)
Die Size
Die Size (Sawn)
Source Attach Area
Gate Attach Area
Die Thickness
Gate and Source: AlSiCu Drain: Ti- NiV- Ag (back side of die) Passivation: Polyimide Wafer Diameter: 8 inch Wafer Sawn on UV Tape Bad Dice Identified in Inking Gross Die Counts: 2768
3810 × 2463.8 3790 ±15 × 2443.8 ±15 3606.3 × 2236.4 359.9 × 517.5 101.6 ±19.1
ORDERING INFORMATION
Device NVCR4LS3D6N08M7A
Package
Wafer Sawn on Foil
REMENDED STORAGE CONDITIONS
Temperature RH
22 to 28°C...