NVD360N65S3
NVD360N65S3 is N-Channel MOSFET manufactured by onsemi.
Features
- Ultra Low Gate Charge & Low Effective Output Capacitance
- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- DC VGSS
Gate- to- Source Voltage
- AC (f > 1 Hz) VGSS
Drain Current
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
Drain Current
- Pulsed (Note 3) IDM
Power Dissipation
(TC = 25°C)
Power Dissipation
- Derate Above 25°C PD
Operating Junction and Storage Temperature Range
TJ, TSTG
650 ±30 ±30 10
6 25 83 0.67
- 55 to +150
V V V A A A W W/°C °C
Single Pulsed Avalanche Energy (Note 4) Repetitive Avalanche Energy (Note 3) MOSFET dv/dt
EAS EAR dv/dt
40 m J
0.83 m J
100 V/ns
Peak Diode Recovery dv/dt (Note 5)...
