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NVD5890N
Power MOSFET
40 V, 123 A, Single N−Channel DPAK
Features
• Low RDS(on) to Minimize Conduction Losses • MSL 1/260°C • AEC Q101 Qualified and PPAP Capable • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Motor Drivers • Pump Drivers for Automotive Braking, Steering and Other High
Current Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
"20
V
Continuous Drain Current (RqJC)
TC = 25°C
ID
TC = 85°C
123
A
95
Power Dissipation (RqJC)
TC = 25°C
PD
Steady
Continuous Drain Cur- State TA = 25°C
ID
rent (RqJA) (Note 1)
TA = 85°C
107
W
24
A
18.5
Power Dissipation (RqJA) (Note 1)
TA = 25°C
PD
4.
NVD5890N Datasheet
