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NVD5890NL
Power MOSFET
40 V, 3.7 mW, 123 A, Single N−Channel DPAK
Features
• Low RDS(on) to Minimize Conduction Losses • MSL 1 @ 260°C • 100% Avalanche Tested • AEC Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent 3)
(RqJC)
(Notes
1
&
TC = 25°C TC = 85°C
VDSS VGS ID
40 "20 123
95
V V A
Power Dissipation (RqJC) (Note 1)
Continuous Drain Cur-
rent 3)
(RqJA)
(Notes
1,
2,
Steady State
TC = 25°C
TA = 25°C TA = 85°C
PD ID
107 W
24 A 18.
NVD5890NL Datasheet
