NVD5890N Description
NVD5890N Power MOSFET 40 V, 123 A, Single N−Channel DPAK.
NVD5890N Key Features
- Low RDS(on) to Minimize Conduction Losses
- MSL 1/260°C
- AEC Q101 Qualified and PPAP Capable
- 100% Avalanche Tested
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS