Datasheet Summary
MOSFET
- Single N-Channel, SUPERFET) III, FRFET)
650 V, 75 A, 27.4 mW
Features
- Ultra Low Gate Charge & Low Effective Output Capacitance
- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS)
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- DC VGSS
Gate- to- Source Voltage
- AC (f > 1 Hz) VGSS
Drain Current
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
Drain Current
- Pulsed (Note 3) IDM
Power Dissipation
(TC = 25°C)
Power Dissipation
- Derate Above...