NVH4L160N120SC1 Description
DATA SHEET .onsemi. Silicon Carbide (SiC) MOSFET 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.3.
NVH4L160N120SC1 Key Features
- Typ. RDS(on) = 160 mW
- Ultra Low Gate Charge (QG(tot) = 34 nC)
- High Speed Switching with Low Capacitance (Coss = 49.5 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS pliant with exemption 7a