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NVH4L160N120SC1 Datasheet SiC MOSFET

Manufacturer: onsemi

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NVH4L160N120SC1 sic mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NVH4L160N120SC1
Manufacturer	onsemi
File Size	353.59 KB
Description	SiC MOSFET
Datasheet	NVH4L160N120SC1 Datasheet

Overview

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.

Key Features

Typ. RDS(on) = 160 mW.
Ultra Low Gate Charge (QG(tot) = 34 nC).
High Speed Switching with Low Capacitance (Coss = 49.5 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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