NVHL080N120SC1 mosfet equivalent, n-channel silicon carbide mosfet.
* Typ. RDS(on) = 80 mW
* Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
* Low Effective Output Capacitance (typ. Coss = 80 pF)
* 100% UIL Tested
* AEC−Q.
* Automotive On Board Charger
* Automotive DC−DC converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwi.
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