NVHL080N120SC1 Datasheet - ON Semiconductor

N-Channel Silicon Carbide MOSFET

* Typ. RDS(on) = 80 mW

* Ultra Low Gate Charge (typ. QG(tot) = 56 nC)

* Low Effective Output Capacitance (typ. Coss = 80 pF)

* 100% UIL Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with exemption

NVHL080N120SC1

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N-channel silicon carbide mosfet.

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