NVHL080N120SC1 - N-Channel Silicon Carbide MOSFET

onsemi

Key Features

Typ. RDS(on) = 80 mW.
Ultra Low Gate Charge (typ. QG(tot) = 56 nC).
Low Effective Output Capacitance (typ. Coss = 80 pF).
100% UIL Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

NVHL080N120SC1 n-channel silicon carbide mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	NVHL080N120SC1
Manufacturer	onsemi
File Size	358.16 KB
Description	N-Channel Silicon Carbide MOSFET
Datasheet	NVHL080N120SC1 Datasheet

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Full PDF Text Transcription (Reference)

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-3L NVHL080N120SC1 Features • Typ. RDS(on) = 80 mW • Ultra Low Gate Charge (typ. QG(tot) = 56 nC) • Low Effective Output Capacitance (typ.