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NVHL095N65S3F Key Features

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 78 mW
  • Ultra Low Gate Charge (Typ. Qg = 65 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 597 pF)
  • 100% Avalanche Tested
  • AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHS

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NVHL095N65S3F Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various...