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  ON Semiconductor Electronic Components Datasheet  

NVJS3151P Datasheet

Trench Power MOSFET

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NTJS3151P, NVJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
Gate Diodes for ESD Protection
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 25 °C
VDSS
VGS
ID
PD
−12
±12
−2.7
−2.0
−3.3
0.625
V
V
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−8.0
−55 to
150
−0.8
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State
RqJA
200 °C/W
Junction−to−Ambient − t 5 s
RqJA
141
Junction−to−Lead – Steady State
RqJL
102
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
www.onsemi.com
V(BR)DSS
−12 V
RDS(on) Typ
45 mW @ −4.5 V
67 mW @ −2.5 V
133 mW @ −1.8 V
ID Max
−3.3 A
SC−88 (SOT−363)
D1
6D
D2
5D
G3
4S
Top View
D
3 kW
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
DDS
1
SC−88/SOT−363
CASE 419B
STYLE 28
6
XXX MG
G
1
DDG
XXX
M
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 4
1
Publication Order Number:
NTJS3151/D


  ON Semiconductor Electronic Components Datasheet  

NVJS3151P Datasheet

Trench Power MOSFET

No Preview Available !

NTJS3151P, NVJS3151P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−12
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
10
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = −9.6 V,
VDS = 0 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±4.5 V
VDS = 0 V, VGS = ±12 V
−1.0 mA
−2.5
±1.5 mA
±10 mA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 100 mA
−0.40
3.4
−1.2 V
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = −4.5 V, ID = −3.3 A
VGS = −2.5 V, ID = −2.9 A
VGS = −1.8 V, ID = −1.0 A
VGS = −10 V, ID = −3.3 A
45 60 mW
67 90
133 160
15 S
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = −12 V
VGS = −4.5 V, VDS = −5.0 V,
ID = −3.3 A
850
170
110
8.6
1.3
2.2
3000
pF
nC
W
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = −4.5 V, VDD = −6.0 V,
ID = −1.0 A, RG = 6.0 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
0.86
1.5
3.5
3.9
ms
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −3.3 A
TJ = 125°C
−0.85 −1.2 V
−0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2


Part Number NVJS3151P
Description Trench Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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