* Small Footprint (5x6 mm) for Compact Design
* Low RDS(on) to Minimize Conduction Losses
* Low QG and Capacitance to Minimize Driver Losses
* AEC
* Q101 Qualified and PPAP Capable
* Wettable Flank Product
* These Devices are Pb
* Free, Hal
NVMFWS003N10MC Datasheet (133.11 KB)
NVMFWS003N10MC
133.11 KB
N-channel mosfet.
DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel 100 V, 3.1 mW, 169 A NVMFWS003N10MC V(BR)DSS 100 V RDS(ON) MAX 3.1 mW @ 10 V ID MAX 169.
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