Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
100 V, 3.9 mW, 138 A
V(BR)DSS 100 V
RDS(ON) MAX 3.9 mW @ 10 V
ID MAX 138 A
D (5,6)
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free, Beryllium Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
TC = 25°C
Current RqJC (Note 1) Steady TC = 100°C
Power Dissipation RqJC...