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NVMFWS004N10MC - N-Channel MOSFET

Key Features

  • Small Footprint (5x6 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 100 V, 3.9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON) MAX 3.