* Small Footprint (5x6 mm) for Compact Design
* Low RDS(on) to Minimize Conduction Losses
* Low QG and Capacitance to Minimize Driver Losses
* AEC
* Q101 Qualified and PPAP Capable
* These Devices are Pb
* Free, Halogen Free/BFR Free, Beryllium Fre
NVMFWS004N10MC Datasheet (206.35 KB)
NVMFWS004N10MC
206.35 KB
N-channel mosfet.
DATA SHEET www.onsemi.com MOSFET Power, Single N-Channel 100 V, 3.9 mW, 138 A NVMFWS004N10MC V(BR)DSS 100 V RDS(ON) MAX 3.9 mW @ 10 V ID.
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