| Description | MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 mW, 119 A NVMFWS3D5N08X Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−... |
| Features |
• Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • Primary Switch in Isolated DC−DC Convert... |
| Datasheet |
 NVMFWS3D5N08X Datasheet 157.14KB |
