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NXH100B120H3Q0PG-R Datasheet Si/sic Hybrid Module

Manufacturer: onsemi

Overview: Si/SiC Hybrid Modules – EliteSiC, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode, Q0 Package NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 1200 V Ultra Field Stop IGBTs.
  • Low Reverse Recovery and Fast Switching SiC Diodes.
  • 1600 V Bypass and Anti.
  • parallel Diodes.
  • Low Inductive Layout.
  • Solderable Pins or Press.
  • Fit Pins.
  • Thermistor.
  • Options with Pre.
  • Applied Thermal Interface Material (TIM) and Without Pre.
  • Applied TIM Typical.

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