* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* Pb
* Free, Halogen Free/BFR Free and RoHS Compli
NXH600B100H4Q2F2SG-R Datasheet (1.73 MB)
NXH600B100H4Q2F2SG-R
1.73 MB
Si/sic hybrid module.
Si/SiC Hybrid Module EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B1.
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