* Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
* 1200 V FSII IGBT VCE(SAT) = 2.2 V
* 1200 V SiC Diode VF = 1.4 V
* Low Inductive Layout
* Solderable Pins
* Thermistor
* Bare Copper and Nickel
* Plated DBC Options Typical Ap
NXH80B120H2Q0 Datasheet (291.00 KB)
NXH80B120H2Q0
291.00 KB
Dual boost power module.
Si/SiC Hybrid Module EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high.
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