NXH80B120H2Q0 Key Features
- Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
- 1200 V FSII IGBT VCE(SAT) = 2.2 V
- 1200 V SiC Diode VF = 1.4 V
- Low Inductive Layout
- Solderable Pins
- Thermistor
- Bare Copper and Nickel-Plated DBC Options
- Part: NXH80B120H2Q0
- Description: Dual Boost Power Module
- Manufacturer: onsemi
- Size: 291.00 KB
Related onsemi Datasheets
| Part Number | Description |
|---|---|
| NXH800H120L7QDSG | Half-Bridge IGBT |
| NXH80T120L2Q0P2G | Q0PACK Module |
| NXH80T120L2Q0PG | Neutral Point Clamp Module |
| NXH80T120L2Q0S2G | Q0PACK Module |
| NXH80T120L2Q0S2TG | Q0PACK Module |