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  ON Semiconductor Electronic Components Datasheet  

RB521S30T1G Datasheet

Schottky Barrier Diode

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RB521S30T1G,
NSVRB521S30T1G,
RB521S30T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA
Low Reverse Current
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 Vdc
Forward Current DC
IF 200 mA
Peak Forward Surge Current (Note 1)
IFSM
1.0
A
ESD Rating: Class 1C per Human Body Model
ESD Rating: Class C per Machine Model
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. 60 Hz for 1 cycle.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
2. FR−5 Minimum Pad.
Symbol
Max
Unit
PD
200 mW
1.57 mW/°C
RqJA
°C/W
635
TJ, Tstg −55 to +125 °C
www.onsemi.com
30 V SCHOTTKY
BARRIER DIODE
SOD−523
CASE 502
1
CATHODE
2
ANODE
MARKING DIAGRAM
5M M G
1 G2
5M = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
RB521S30T1G
SOD−523 4 mm Pitch
(Pb−Free) 3,000/Tape & Reel
NSVRB521S30T1G SOD−523 4 mm Pitch
(Pb−Free) 3,000/Tape & Reel
RB521S30T5G
SOD−523 2 mm Pitch
(Pb−Free) 8,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 9
1
Publication Order Number:
RB521S30T1/D


  ON Semiconductor Electronic Components Datasheet  

RB521S30T1G Datasheet

Schottky Barrier Diode

No Preview Available !

RB521S30T1G, NSVRB521S30T1G, RB521S30T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Leakage (VR = 10 V)
IR − − 30.0
Forward Voltage (IF = 200 mA)
VF
− 0.50
1
100m
TA = 125°C
10m TA = 75°C
1m
100m
10m
1m
0
10m
1m
100m
10m
1m
100n
10n
1n
0
20
18
16
14
12
10
8
6
4
2
0
0
TA = 25°C
TA = −25°C
0.1 0.2 0.3 0.4 0.5
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
TA = 125°C
TA = 75°C
TA = 25°C
TA = −25°C
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Characteristics
5 10 15 20 25
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Total Capacitance
0.6
30
30
www.onsemi.com
2
Unit
mA
Vdc


Part Number RB521S30T1G
Description Schottky Barrier Diode
Maker ON Semiconductor
Total Page 3 Pages
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