Datasheet4U Logo Datasheet4U.com

TIP120G - NPN Transistor

Download the TIP120G datasheet PDF. This datasheet also covers the TIP121 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 100 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP120, TIP125 = 80 Vdc (Min).
  • TIP121, TIP126 = 100 Vdc (Min).
  • TIP122, TIP127.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shu.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP121-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP120G
Manufacturer onsemi
File Size 297.68 KB
Description NPN Transistor
Datasheet download datasheet TIP120G Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP120 Darlington NPN Power Transistors TAITRON
TIP120 NPN Transistor WEITRON
TIP120 NPN Epitaxial Darlington Transistors MCC
TIP120 NPN PLASTIC POWER TRANSISTORS CDIL
TIP120 Silicon NPN Darlington Power Transistors SavantIC

Other Datasheets by onsemi

Part Number Description
TIP120 Plastic Medium-Power Complementary Silicon Transistors
TIP121 Plastic Medium-Power Complementary Silicon Transistors
TIP121G NPN Transistor
TIP122 Plastic Medium-Power Complementary Silicon Transistors
TIP122G NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.