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BP104F - Silicon PIN Photodiode

Key Features

  • Package: black epoxy.
  • Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors.
  • ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2).
  • Especially suitable for.

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Datasheet Details

Part number BP104F
Manufacturer ams OSRAM
File Size 530.05 KB
Description Silicon PIN Photodiode
Datasheet download datasheet BP104F Datasheet

Full PDF Text Transcription for BP104F (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BP104F. For precise diagrams, and layout, please refer to the original PDF.

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BP 104 F  BP 104 F DIL Silicon PIN Photodiode with Daylight Blocking Filter Applications ——Electronic Equipment ——Industria...

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ylight Blocking Filter Applications ——Electronic Equipment ——Industrial Automation (Machine controls, Light barriers, Vision controls) Features: ——Package: black epoxy ——Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Especially suitable for applications of 950 nm ——Short switching time (typ. 20 ns) ——DIL plastic package with high packing density Ordering Information Type Photocurrent Ee = 1 mW/cm²; λ = 950 nm; VR = 5 V IP Photocurrent typ.